Title: Analytical Switching Loss Modeling Based on Datasheet Parameters for <sc>mosfet</sc>s in a Half-Bridge
Abstract: Modern wide-bandgap devices, such as SiC or GaN based devices, feature significantly reduced switching losses and the question arises if soft-switching operating modes are still beneficial.For most semiconductor devices only limited information is available to estimate the switching losses.Especially if a wide operating range is desired, excessive measurements have to be performed to determine the switching losses for arbitrary operating points.Therefore, in this paper a fast calculation method to determine the switching losses based on the charge equivalent approximation of the MOSFET capacitances, relying only on datasheet parameters, is presented.In addition, the turn-off losses at high switching currents are investigated and an analytical expression to estimate the maximum current range for which the MOSFET can be turned-off with negligible switching losses is proposed.