Title: Analytical Modeling of Organic–Inorganic CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> Perovskite Resistive Switching and its Application for Neuromorphic Recognition (Adv. Theory Simul. 4/2018)
Abstract:Analytical models are crucial for building a theoretical basis for optimizing RRAM scheme and implementing its application in neuromorphic computing. In article number 1700035, Zhongqiang Wang, Haiyan...Analytical models are crucial for building a theoretical basis for optimizing RRAM scheme and implementing its application in neuromorphic computing. In article number 1700035, Zhongqiang Wang, Haiyang Xu, Daniele Ielmini, and co-workers present an analytical model demonstrating the evolution of resistive switching dynamics for CH3NH3PbI3 perovskite-based RRAM. Furthermore, a 2-layer neuromorphic network with 2-transistor/1-resistor synapses is demonstrated. This study paves the way for the use of perovskite-based RRAM devices for neuromorphic systems.Read More