Title: Opportunity of CMOS FD-SOI for RF power amplifier
Abstract: This paper reports the design of a 5GHz WiFi power amplifier (PA) taking advantage of the FD-SOI technology. Fabricated in a 28nm UTBB FD-SOI process with 1.8-V thick oxide devices, the PA output exhibits 23dBm Psat, 18dBm under low distortion with a 3.7V power supply. The core occupies less than 1mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> while integrating transformer and baluns.
Publication Year: 2017
Publication Date: 2017-10-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 5
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