Title: A DC-90-GHz 4- $V_{\mathrm{ pp}}$ Modulator Driver in a 0.13- $\mu \text{m}$ SiGe:C BiCMOS Process
Abstract: In this paper, a linear driver for optical modulators in a 0.13-μm SiGe:C BiCMOS technology with f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> of 300/500 GHz is presented. The design is implemented following a distributed amplifier topology in a differential manner. The driver features a small-signal gain of 12.5 dB and a 3-dB bandwidth of 90 GHz and delivers a maximum output amplitude of 4 V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">pp</sub> to a 100-Q differential load. Delivering the maximum output swing, the large-signal gain is 10.5 dB. Time-domain measurements are performed, showing the maximum output swing with ON-OFF keying (OOK) eye-diagrams up to 64 Gb/s and pulse amplitude modulation-4 up to 45 Gbaud (90 Gb/s). Moreover, OOK eyediagrams up to 120 Gb/s are reported with an output swing of 3 V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ppd</sub> . Total harmonic distortion measurements are also conducted demonstrating a value of 5% at 1 and 8 GHz up to an input amplitude of 800 mV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ppd</sub> . Using a reduced number of stages in the design, the power dissipation of the integrated circuit is 550 mW, resulting in an output power to power dissipation ratio of 3.6%. To the best knowledge of the authors, this is the first time a linear driver for optical modulators demonstrates such high bandwidth and efficiency for the demonstrated data-rates.
Publication Year: 2017
Publication Date: 2017-12-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 21
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