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{'id': 'https://openalex.org/W2764459757', 'doi': None, 'title': 'Growth and Characterization of GaAs layers Grown on Ge/Si Substrates by Metalorganic Chemical Vapor Deposition : Condensed matter', 'display_name': 'Growth and Characterization of GaAs layers Grown on Ge/Si Substrates by Metalorganic Chemical Vapor Deposition : Condensed matter', 'publication_year': 1988, 'publication_date': '1988-04-20', 'ids': {'openalex': 'https://openalex.org/W2764459757', 'mag': '2764459757'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'http://ci.nii.ac.jp/naid/110003908072', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S4306514835', 'display_name': 'Japanese journal of applied physics. Pt. 1, Regular papers & short notes', 'issn_l': None, 'issn': None, 'is_oa': False, 'is_in_doaj': False, 'is_core': False, 'host_organization': None, 'host_organization_name': None, 'host_organization_lineage': [], 'host_organization_lineage_names': [], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': [], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5062479638', 'display_name': 'Yukio Fukuda', 'orcid': None}, 'institutions': [], 'countries': [], 'is_corresponding': False, 'raw_author_name': 'Yukio Fukuda', 'raw_affiliation_strings': [], 'affiliations': []}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5047959444', 'display_name': 'Y. Kadota', 'orcid': None}, 'institutions': [], 'countries': [], 'is_corresponding': False, 'raw_author_name': 'Yoshiaki Kadota', 'raw_affiliation_strings': [], 'affiliations': []}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5036315103', 'display_name': 'Yoshiro Ohmachi', 'orcid': None}, 'institutions': [], 'countries': [], 'is_corresponding': False, 'raw_author_name': 'Yoshiro Ohmachi', 'raw_affiliation_strings': [], 'affiliations': []}], 'countries_distinct_count': 0, 'institutions_distinct_count': 0, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': 0.0, 'has_fulltext': False, 'cited_by_count': 0, 'citation_normalized_percentile': {'value': 0.0, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 0, 'max': 53}, 'biblio': {'volume': '27', 'issue': '4', 'first_page': '485', 'last_page': '488'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10022', 'display_name': 'Quantum Dot Devices and Semiconductors', 'score': 0.9521, 'subfield': {'id': 'https://openalex.org/subfields/3107', 'display_name': 'Atomic and Molecular Physics, and Optics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10022', 'display_name': 'Quantum Dot Devices and Semiconductors', 'score': 0.9521, 'subfield': {'id': 'https://openalex.org/subfields/3107', 'display_name': 'Atomic and Molecular Physics, and Optics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/characterization', 'display_name': 'Characterization (materials science)', 'score': 0.65963125}, {'id': 'https://openalex.org/keywords/deposition', 'display_name': 'Deposition (geology)', 'score': 0.53216183}, {'id': 'https://openalex.org/keywords/entangled-photons', 'display_name': 'Entangled Photons', 'score': 0.432254}], 'concepts': [{'id': 'https://openalex.org/C57410435', 'wikidata': 'https://www.wikidata.org/wiki/Q505668', 'display_name': 'Chemical vapor deposition', 'level': 2, 'score': 0.82087386}, {'id': 'https://openalex.org/C175665537', 'wikidata': 'https://www.wikidata.org/wiki/Q1924991', 'display_name': 'Metalorganic vapour phase epitaxy', 'level': 4, 'score': 0.6664503}, {'id': 'https://openalex.org/C2780841128', 'wikidata': 'https://www.wikidata.org/wiki/Q5073781', 'display_name': 'Characterization (materials science)', 'level': 2, 'score': 0.65963125}, {'id': 'https://openalex.org/C64297162', 'wikidata': 'https://www.wikidata.org/wiki/Q1987070', 'display_name': 'Deposition (geology)', 'level': 3, 'score': 0.53216183}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.48330116}, {'id': 'https://openalex.org/C550623735', 'wikidata': 'https://www.wikidata.org/wiki/Q867', 'display_name': 'Germanium', 'level': 3, 'score': 0.43027264}, {'id': 'https://openalex.org/C149849071', 'wikidata': 'https://www.wikidata.org/wiki/Q1263816', 'display_name': 'Chemical composition', 'level': 2, 'score': 0.4290065}, {'id': 'https://openalex.org/C185592680', 'wikidata': 'https://www.wikidata.org/wiki/Q2329', 'display_name': 'Chemistry', 'level': 0, 'score': 0.41731092}, {'id': 'https://openalex.org/C42360764', 'wikidata': 'https://www.wikidata.org/wiki/Q83588', 'display_name': 'Chemical engineering', 'level': 1, 'score': 0.37026298}, {'id': 'https://openalex.org/C113196181', 'wikidata': 'https://www.wikidata.org/wiki/Q485223', 'display_name': 'Analytical Chemistry (journal)', 'level': 2, 'score': 0.3539139}, {'id': 'https://openalex.org/C544956773', 'wikidata': 'https://www.wikidata.org/wiki/Q670', 'display_name': 'Silicon', 'level': 2, 'score': 0.31800306}, {'id': 'https://openalex.org/C110738630', 'wikidata': 'https://www.wikidata.org/wiki/Q1135540', 'display_name': 'Epitaxy', 'level': 3, 'score': 0.299459}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.29318744}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.2865641}, {'id': 'https://openalex.org/C107872376', 'wikidata': 'https://www.wikidata.org/wiki/Q321355', 'display_name': 'Environmental chemistry', 'level': 1, 'score': 0.18628672}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.18117505}, {'id': 'https://openalex.org/C86803240', 'wikidata': 'https://www.wikidata.org/wiki/Q420', 'display_name': 'Biology', 'level': 0, 'score': 0.076272845}, {'id': 'https://openalex.org/C151730666', 'wikidata': 'https://www.wikidata.org/wiki/Q7205', 'display_name': 'Paleontology', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C178790620', 'wikidata': 'https://www.wikidata.org/wiki/Q11351', 'display_name': 'Organic chemistry', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C2816523', 'wikidata': 'https://www.wikidata.org/wiki/Q180184', 'display_name': 'Sediment', 'level': 2, 'score': 0.0}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'http://ci.nii.ac.jp/naid/110003908072', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S4306514835', 'display_name': 'Japanese journal of applied physics. Pt. 1, Regular papers & short notes', 'issn_l': None, 'issn': None, 'is_oa': False, 'is_in_doaj': False, 'is_core': False, 'host_organization': None, 'host_organization_name': None, 'host_organization_lineage': [], 'host_organization_lineage_names': [], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 0, 'referenced_works': [], 'related_works': ['https://openalex.org/W429721195', 'https://openalex.org/W360747192', 'https://openalex.org/W3113207012', 'https://openalex.org/W3031670911', 'https://openalex.org/W3031272871', 'https://openalex.org/W3027565784', 'https://openalex.org/W3027224829', 'https://openalex.org/W2952126208', 'https://openalex.org/W2789737009', 'https://openalex.org/W2764513980', 'https://openalex.org/W2735494767', 'https://openalex.org/W2394712355', 'https://openalex.org/W2327944400', 'https://openalex.org/W2288479163', 'https://openalex.org/W2138157570', 'https://openalex.org/W2133100717', 'https://openalex.org/W2083979328', 'https://openalex.org/W2070787473', 'https://openalex.org/W2038672773', 'https://openalex.org/W1983694964'], 'abstract_inverted_index': None, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W2764459757', 'counts_by_year': [], 'updated_date': '2024-08-22T00:42:37.856642', 'created_date': '2017-10-27'}