Publication Information

{'id': 'https://openalex.org/W2743536982', 'doi': 'https://doi.org/10.1109/itherm.2017.7992584', 'title': 'Comparison of hot spot temperature between Si and SiC power MOSFET using electro-thermal analysis', 'display_name': 'Comparison of hot spot temperature between Si and SiC power MOSFET using electro-thermal analysis', 'publication_year': 2017, 'publication_date': '2017-05-01', 'ids': {'openalex': 'https://openalex.org/W2743536982', 'doi': 'https://doi.org/10.1109/itherm.2017.7992584', 'mag': '2743536982'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/itherm.2017.7992584', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'proceedings-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5018832971', 'display_name': 'Risako Kibushi', 'orcid': 'https://orcid.org/0000-0002-5609-0733'}, 'institutions': [{'id': 'https://openalex.org/I75522678', 'display_name': 'Sanyo-Onoda City University', 'ror': 'https://ror.org/01xfcjr43', 'country_code': 'JP', 'type': 'education', 'lineage': ['https://openalex.org/I75522678']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'Risako Kibushi', 'raw_affiliation_strings': ['Department of Mechanical Engineering, Tokyo University of Science, Yamaguchi, Japan'], 'affiliations': [{'raw_affiliation_string': 'Department of Mechanical Engineering, Tokyo University of Science, Yamaguchi, Japan', 'institution_ids': ['https://openalex.org/I75522678']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5059444944', 'display_name': 'Tomoyuki Hatakeyama', 'orcid': 'https://orcid.org/0009-0002-7248-0288'}, 'institutions': [{'id': 'https://openalex.org/I63216439', 'display_name': 'Toyama Prefectural University', 'ror': 'https://ror.org/03xgh2v50', 'country_code': 'JP', 'type': 'education', 'lineage': ['https://openalex.org/I63216439']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'Tomoyuki Hatakeyama', 'raw_affiliation_strings': ['Department of Mechanical System Engineering, Toyama Prefectural University, Imizu, Toyama, Japan'], 'affiliations': [{'raw_affiliation_string': 'Department of Mechanical System Engineering, Toyama Prefectural University, Imizu, Toyama, Japan', 'institution_ids': ['https://openalex.org/I63216439']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5109259218', 'display_name': 'Kazuhisa Yuki', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I75522678', 'display_name': 'Sanyo-Onoda City University', 'ror': 'https://ror.org/01xfcjr43', 'country_code': 'JP', 'type': 'education', 'lineage': ['https://openalex.org/I75522678']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'Kazuhisa Yuki', 'raw_affiliation_strings': ['Department of Mechanical Engineering, Tokyo University of Science, Yamaguchi, Japan'], 'affiliations': [{'raw_affiliation_string': 'Department of Mechanical Engineering, Tokyo University of Science, Yamaguchi, Japan', 'institution_ids': ['https://openalex.org/I75522678']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5008408012', 'display_name': 'Noriyuki Unno', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I75522678', 'display_name': 'Sanyo-Onoda City University', 'ror': 'https://ror.org/01xfcjr43', 'country_code': 'JP', 'type': 'education', 'lineage': ['https://openalex.org/I75522678']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'Noriyuki Unno', 'raw_affiliation_strings': ['Department of Mechanical Engineering, Tokyo University of Science, Yamaguchi, Japan'], 'affiliations': [{'raw_affiliation_string': 'Department of Mechanical Engineering, Tokyo University of Science, Yamaguchi, Japan', 'institution_ids': ['https://openalex.org/I75522678']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5113734788', 'display_name': 'Masaru Ishizuka', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I63216439', 'display_name': 'Toyama Prefectural University', 'ror': 'https://ror.org/03xgh2v50', 'country_code': 'JP', 'type': 'education', 'lineage': ['https://openalex.org/I63216439']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'Masaru Ishizuka', 'raw_affiliation_strings': ['Department of Mechanical System Engineering, Toyama Prefectural University, Imizu, Toyama, Japan'], 'affiliations': [{'raw_affiliation_string': 'Department of Mechanical System Engineering, Toyama Prefectural University, Imizu, Toyama, Japan', 'institution_ids': ['https://openalex.org/I63216439']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 2, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': 0.916, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 6, 'citation_normalized_percentile': {'value': 0.80523, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 81, 'max': 82}, 'biblio': {'volume': None, 'issue': None, 'first_page': '921', 'last_page': '925'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10361', 'display_name': 'Silicon Carbide Semiconductor Technologies', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10361', 'display_name': 'Silicon Carbide Semiconductor Technologies', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10558', 'display_name': 'Advancements in Semiconductor Devices and Circuit Design', 'score': 0.9998, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 0.9991, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/power-electronics', 'display_name': 'Power Electronics', 'score': 0.6188173}, {'id': 'https://openalex.org/keywords/power-module', 'display_name': 'Power module', 'score': 0.52462846}, {'id': 'https://openalex.org/keywords/power-mosfet', 'display_name': 'Power MOSFET', 'score': 0.5063318}], 'concepts': [{'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.6986239}, {'id': 'https://openalex.org/C129014197', 'wikidata': 'https://www.wikidata.org/wiki/Q906544', 'display_name': 'Power semiconductor device', 'level': 3, 'score': 0.6642128}, {'id': 'https://openalex.org/C2778413303', 'wikidata': 'https://www.wikidata.org/wiki/Q210793', 'display_name': 'MOSFET', 'level': 4, 'score': 0.6275505}, {'id': 'https://openalex.org/C178911571', 'wikidata': 'https://www.wikidata.org/wiki/Q593143', 'display_name': 'Power electronics', 'level': 3, 'score': 0.6188173}, {'id': 'https://openalex.org/C199672914', 'wikidata': 'https://www.wikidata.org/wiki/Q4241353', 'display_name': 'Hot spot (computer programming)', 'level': 2, 'score': 0.60527486}, {'id': 'https://openalex.org/C79635011', 'wikidata': 'https://www.wikidata.org/wiki/Q175805', 'display_name': 'Semiconductor device', 'level': 3, 'score': 0.60227084}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.58128726}, {'id': 'https://openalex.org/C61696701', 'wikidata': 'https://www.wikidata.org/wiki/Q770766', 'display_name': 'Engineering physics', 'level': 1, 'score': 0.55094314}, {'id': 'https://openalex.org/C138331895', 'wikidata': 'https://www.wikidata.org/wiki/Q11650', 'display_name': 'Electronics', 'level': 2, 'score': 0.546021}, {'id': 'https://openalex.org/C108225325', 'wikidata': 'https://www.wikidata.org/wiki/Q11456', 'display_name': 'Semiconductor', 'level': 2, 'score': 0.54237264}, {'id': 'https://openalex.org/C141812795', 'wikidata': 'https://www.wikidata.org/wiki/Q7236534', 'display_name': 'Power module', 'level': 3, 'score': 0.52462846}, {'id': 'https://openalex.org/C88653102', 'wikidata': 'https://www.wikidata.org/wiki/Q570553', 'display_name': 'Power MOSFET', 'level': 5, 'score': 0.5063318}, {'id': 'https://openalex.org/C204530211', 'wikidata': 'https://www.wikidata.org/wiki/Q752823', 'display_name': 'Thermal', 'level': 2, 'score': 0.4786695}, {'id': 'https://openalex.org/C167781694', 'wikidata': 'https://www.wikidata.org/wiki/Q6311800', 'display_name': 'Junction temperature', 'level': 3, 'score': 0.4590612}, {'id': 'https://openalex.org/C2780722187', 'wikidata': 'https://www.wikidata.org/wiki/Q412356', 'display_name': 'Silicon carbide', 'level': 2, 'score': 0.41697425}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.36782563}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.34139743}, {'id': 'https://openalex.org/C163258240', 'wikidata': 'https://www.wikidata.org/wiki/Q25342', 'display_name': 'Power (physics)', 'level': 2, 'score': 0.32680434}, {'id': 'https://openalex.org/C172385210', 'wikidata': 'https://www.wikidata.org/wiki/Q5339', 'display_name': 'Transistor', 'level': 3, 'score': 0.17403075}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.16820213}, {'id': 'https://openalex.org/C41008148', 'wikidata': 'https://www.wikidata.org/wiki/Q21198', 'display_name': 'Computer science', 'level': 0, 'score': 0.15885451}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.122555226}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.08054075}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.0}, {'id': 'https://openalex.org/C62520636', 'wikidata': 'https://www.wikidata.org/wiki/Q944', 'display_name': 'Quantum mechanics', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C153294291', 'wikidata': 'https://www.wikidata.org/wiki/Q25261', 'display_name': 'Meteorology', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C191897082', 'wikidata': 'https://www.wikidata.org/wiki/Q11467', 'display_name': 'Metallurgy', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C111919701', 'wikidata': 'https://www.wikidata.org/wiki/Q9135', 'display_name': 'Operating system', 'level': 1, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/itherm.2017.7992584', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [{'score': 0.87, 'id': 'https://metadata.un.org/sdg/7', 'display_name': 'Affordable and clean energy'}], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 10, 'referenced_works': ['https://openalex.org/W1975457142', 'https://openalex.org/W1980230573', 'https://openalex.org/W2020862744', 'https://openalex.org/W2031388409', 'https://openalex.org/W2053187981', 'https://openalex.org/W2106106516', 'https://openalex.org/W3017240397', 'https://openalex.org/W4237786503', 'https://openalex.org/W4246073215', 'https://openalex.org/W4298132033'], 'related_works': ['https://openalex.org/W4317382130', 'https://openalex.org/W4312314747', 'https://openalex.org/W4297808822', 'https://openalex.org/W4223962616', 'https://openalex.org/W2904285589', 'https://openalex.org/W2798417595', 'https://openalex.org/W2568603120', 'https://openalex.org/W2135904172', 'https://openalex.org/W2020461329', 'https://openalex.org/W1943272480'], 'abstract_inverted_index': {'Recently,': [0], 'thermal': [1, 68, 93, 102, 115, 161, 188, 202], 'problem': [2], 'of': [3, 48, 56, 58, 65, 95, 104, 114, 117, 163, 182, 190, 196, 201], 'electronics': [4], 'is': [5, 26, 75, 150, 208], 'becoming': [6], 'more': [7], 'serious,': [8], 'because': [9], 'electronic': [10], 'devices': [11, 83, 108], 'have': [12], 'been': [13], 'downsizing.': [14], 'Especially,': [15], 'since': [16], 'very': [17], 'high': [18, 31, 124], 'electrical': [19], 'field': [20, 126], 'generates': [21, 127], 'in': [22, 36, 128], 'power': [23, 81, 98, 106, 129, 165, 184, 192, 198], 'devices,': [24, 100, 131], 'it': [25], 'possible': [27], 'that': [28, 195], 'nano-micro': [29, 71], 'scale': [30, 72], 'temperature': [32, 42, 181], 'hot': [33, 40, 52, 73, 145, 179], 'spots': [34], 'appear': [35], 'the': [37, 51, 59, 96, 144], 'device.': [38, 60], 'The': [39], 'spot': [41, 53, 74, 180], 'has': [43, 54], 'an': [44], 'impact': [45], 'on': [46, 175], 'performance': [47], 'electronics,': [49, 66], 'and': [50, 137, 147, 178], 'potential': [55], 'malfunctioning': [57], 'Therefore,': [61], 'for': [62], 'higher': [63], 'reliability': [64], 'accurate': [67, 92, 101], 'design': [69, 94], 'considering': [70], 'important.': [76], 'In': [77, 158], 'recent': [78], 'years,': [79], 'SiC': [80, 97, 105, 118, 164, 183, 197], 'semiconductor': [82, 89, 99, 107, 130, 166], 'are': [84, 120, 168], 'receiving': [85], 'attention': [86], 'as': [87], 'high-voltage': [88], 'devices.': [90], 'For': [91], 'properties': [103, 116, 162, 189, 203], 'should': [109, 139], 'be': [110, 140], 'obtained.': [111], 'However,': [112], 'details': [113], 'device': [119, 167], 'not': [121], 'clear.': [122], 'Since': [123], 'electric': [125], 'energy': [132], 'non-equilibrium': [133], 'state': [134], 'between': [135, 204], 'electron': [136], 'lattice': [138], 'considered': [141], 'to': [142, 152], 'investigate': [143], 'spot,': [146], 'Electro-Thermal': [148, 171], 'Analysis': [149], 'attractive': [151], 'deal': [153], 'with': [154, 194], 'this': [155, 159], 'nonequilibrium': [156], 'state.': [157], 'paper,': [160], 'discussed': [169], 'using': [170], 'Analysis.': [172], 'We': [173], 'focus': [174], 'heat': [176], 'generation': [177], 'MOSFET.': [185], 'By': [186], 'comparing': [187], 'Si': [191], 'MOSFET': [193], 'MOSFET,': [199], 'difference': [200], 'these': [205], 'two': [206], 'MOSFETs': [207], 'discussed.': [209]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W2743536982', 'counts_by_year': [{'year': 2024, 'cited_by_count': 1}, {'year': 2022, 'cited_by_count': 1}, {'year': 2021, 'cited_by_count': 1}, {'year': 2020, 'cited_by_count': 2}, {'year': 2018, 'cited_by_count': 1}], 'updated_date': '2024-12-12T05:44:56.227709', 'created_date': '2017-08-17'}