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{'id': 'https://openalex.org/W2617599841', 'doi': 'https://doi.org/10.1166/jnn.2017.13397', 'title': 'Optical and Structural Characterization of Dislocations in GaN Epitaxial Layers', 'display_name': 'Optical and Structural Characterization of Dislocations in GaN Epitaxial Layers', 'publication_year': 2017, 'publication_date': '2017-05-26', 'ids': {'openalex': 'https://openalex.org/W2617599841', 'doi': 'https://doi.org/10.1166/jnn.2017.13397', 'mag': '2617599841'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1166/jnn.2017.13397', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S133947007', 'display_name': 'Journal of Nanoscience and Nanotechnology', 'issn_l': '1533-4880', 'issn': ['1533-4880', '1533-4899'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310321646', 'host_organization_name': 'American Scientific Publishers', 'host_organization_lineage': ['https://openalex.org/P4310321646'], 'host_organization_lineage_names': ['American Scientific Publishers'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5102265430', 'display_name': 'Yong Choon Park', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I2250650973', 'display_name': 'Samsung (South Korea)', 'ror': 'https://ror.org/04w3jy968', 'country_code': 'KR', 'type': 'company', 'lineage': ['https://openalex.org/I2250650973']}], 'countries': ['KR'], 'is_corresponding': False, 'raw_author_name': 'Yong Choon Park', 'raw_affiliation_strings': ['Analytical Research Group, Samsung Electro-Mechanics Co., LTD., Suwon-si, Kyounggi-do 16674, Republic of Korea'], 'affiliations': [{'raw_affiliation_string': 'Analytical Research Group, Samsung Electro-Mechanics Co., LTD., Suwon-si, Kyounggi-do 16674, Republic of Korea', 'institution_ids': ['https://openalex.org/I2250650973']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5079378820', 'display_name': 'Mi‐Yang Kim', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I2250650973', 'display_name': 'Samsung (South Korea)', 'ror': 'https://ror.org/04w3jy968', 'country_code': 'KR', 'type': 'company', 'lineage': ['https://openalex.org/I2250650973']}], 'countries': ['KR'], 'is_corresponding': False, 'raw_author_name': 'Mi-Yang Kim', 'raw_affiliation_strings': ['Analytical Research Group, Samsung Electro-Mechanics Co., LTD., Suwon-si, Kyounggi-do 16674, Republic of Korea'], 'affiliations': [{'raw_affiliation_string': 'Analytical Research Group, Samsung Electro-Mechanics Co., LTD., Suwon-si, Kyounggi-do 16674, Republic of Korea', 'institution_ids': ['https://openalex.org/I2250650973']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5001809790', 'display_name': 'Young Joon Yoon', 'orcid': 'https://orcid.org/0000-0001-8161-7755'}, 'institutions': [{'id': 'https://openalex.org/I4210110928', 'display_name': 'Korea Institute of Ceramic Engineering and Technology', 'ror': 'https://ror.org/024t5tt95', 'country_code': 'KR', 'type': 'facility', 'lineage': ['https://openalex.org/I4210110928']}], 'countries': ['KR'], 'is_corresponding': False, 'raw_author_name': 'Young Joon Yoon', 'raw_affiliation_strings': ['Nano-Convergence Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju-si, Gyeongsangnam-do 52851, Republic of Korea'], 'affiliations': [{'raw_affiliation_string': 'Nano-Convergence Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju-si, Gyeongsangnam-do 52851, Republic of Korea', 'institution_ids': ['https://openalex.org/I4210110928']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 2, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': 0.0, 'has_fulltext': False, 'cited_by_count': 0, 'citation_normalized_percentile': {'value': 0.0, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 0, 'max': 63}, 'biblio': {'volume': '17', 'issue': '6', 'first_page': '4262', 'last_page': '4266'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10099', 'display_name': 'GaN-based semiconductor devices and materials', 'score': 0.9987, 'subfield': {'id': 'https://openalex.org/subfields/3104', 'display_name': 'Condensed Matter Physics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10099', 'display_name': 'GaN-based semiconductor devices and materials', 'score': 0.9987, 'subfield': {'id': 'https://openalex.org/subfields/3104', 'display_name': 'Condensed Matter Physics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 0.9943, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10377', 'display_name': 'Metal and Thin Film Mechanics', 'score': 0.9906, 'subfield': {'id': 'https://openalex.org/subfields/2211', 'display_name': 'Mechanics of Materials'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/characterization', 'display_name': 'Characterization', 'score': 0.79482603}], 'concepts': [{'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.95299536}, {'id': 'https://openalex.org/C2780841128', 'wikidata': 'https://www.wikidata.org/wiki/Q5073781', 'display_name': 'Characterization (materials science)', 'level': 2, 'score': 0.79482603}, {'id': 'https://openalex.org/C110738630', 'wikidata': 'https://www.wikidata.org/wiki/Q1135540', 'display_name': 'Epitaxy', 'level': 3, 'score': 0.7565738}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.5539759}, {'id': 'https://openalex.org/C8010536', 'wikidata': 'https://www.wikidata.org/wiki/Q160398', 'display_name': 'Crystallography', 'level': 1, 'score': 0.35914242}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.28382155}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.14935401}, {'id': 'https://openalex.org/C185592680', 'wikidata': 'https://www.wikidata.org/wiki/Q2329', 'display_name': 'Chemistry', 'level': 0, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1166/jnn.2017.13397', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S133947007', 'display_name': 'Journal of Nanoscience and Nanotechnology', 'issn_l': '1533-4880', 'issn': ['1533-4880', '1533-4899'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310321646', 'host_organization_name': 'American Scientific Publishers', 'host_organization_lineage': ['https://openalex.org/P4310321646'], 'host_organization_lineage_names': ['American Scientific Publishers'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 0, 'referenced_works': [], 'related_works': ['https://openalex.org/W4292492973', 'https://openalex.org/W4230250635', 'https://openalex.org/W3144504424', 'https://openalex.org/W3120461830', 'https://openalex.org/W3041790586', 'https://openalex.org/W2899084033', 'https://openalex.org/W2898370298', 'https://openalex.org/W2744391499', 'https://openalex.org/W2325423348', 'https://openalex.org/W2018879842'], 'abstract_inverted_index': None, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W2617599841', 'counts_by_year': [], 'updated_date': '2024-12-09T22:31:36.070357', 'created_date': '2017-06-05'}