Title: A quasi-2D threshold voltage model for short-channel junctionless (JL) double-gate MOSFETs
Abstract: Based on the bulk conduction mode of the quasi-2D scaling theory, an analytical threshold voltage model for short-channel junctionless (JL) double-gate MOSFETs is developed for the first time. The model explicitly shows how the device parameters such as the silicon thickness, oxide thickness, drain bias, and channel length affect the threshold voltage degradation. The model can also be extended to modeling accumulation/inversion (AM/IV) operation mode for junctionless/junction-based (JL/JB) double-gate MOSFETs. The model is verified by the 2-D device simulator and can be easily used to explore the threshold voltage behavior of the JL double-gate MOSFEs due to its simple formula and computational efficiency.
Publication Year: 2012
Publication Date: 2012-12-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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