Abstract:The basic results of plasma etching of silicon in CCI <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> F <sub xmlns:mml="http://www.w3.org/1998/Ma...The basic results of plasma etching of silicon in CCI <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> in quartz reactor with teflon polymer by a covering are considered. The uninconsistent model of plasma chemical of etching (PCE) of silicon in plasma CCl <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polymer. The deep etching of silicon up to 180 mkm for 30 minutes is carried out. However anisotropy of deep etching of silicon low.Read More
Publication Year: 2006
Publication Date: 2006-09-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 11
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