Title: III-Nitride Optoelectronic Devices: From ultraviolet detectors and visible emitters towards terahertz intersubband devices
Abstract: III-nitride optoelectronic devices are discussed. Ultraviolet detectors and visible emitters towards terahertz intersubband devices are reported. Demonstration of single photon detection efficiencies of 33% in the ultraviolet regime, intersubband energy levels as low as in the mid-infrared regime, and GaN-based resonant tunneling diodes with negative resistance of 67 Ω are demonstrated.
Publication Year: 2010
Publication Date: 2010-11-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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