Title: A highly manufacturable trench isolation process for deep submicron DRAMs
Abstract: A simple Shallow Trench Isolation (STI) process is proposed for deep sub-micron DRAM applications. The features of this STI flow are tapered trench sidewalls, a slight trench reoxidation, a vertical B field implant, a CMP-only planarization, and disposable oxide spacers to smooth the trench corners. The scalability of this process makes it suitable for 256 Mb to 4 Gb DRAM generations.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Publication Year: 2002
Publication Date: 2002-12-30
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 21
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