Title: Generation-recombination-type noise in nip diodes
Abstract: It is shown for pin diodes, in which the current flow is by hole-electron pair generation and (or) recombination, that the 1ƒγ noise is due to generation-recombination processes involving traps and (or) recombination centers and that the spectrum may be written as SI(ƒ) = αHe|I|/[ƒγτ], where αH is the Hooge parameter, ϱ the electron charge, |I| the absolute current, τ the time constant associated with the pair generation and pair recombination process, ƒ the frequency and γ is the exponent of the spectrum. This is studied experimentally and the Hooge parameters of various devices are determined.
Publication Year: 1989
Publication Date: 1989-10-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 4
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