Title: Evidence of Both Surface and Bulk Dirac Bands and Anisotropic Nonsaturating Magnetoresistance in ZrSiS
Abstract: Advanced Electronic MaterialsVolume 2, Issue 10 1600228 Communication Evidence of Both Surface and Bulk Dirac Bands and Anisotropic Nonsaturating Magnetoresistance in ZrSiS Xuefeng Wang, Corresponding Author Xuefeng Wang [email protected] National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 P. R. ChinaE-mail: [email protected], [email protected], [email protected]Search for more papers by this authorXingchen Pan, Xingchen Pan School of Physics, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorMing Gao, Ming Gao National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorJihai Yu, Jihai Yu School of Physics, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorJuan Jiang, Juan Jiang School of Physical Science and Technology, ShanghaiTech University, CAS-Shanghai Science Research Center, Shanghai, 200031 P. R. ChinaSearch for more papers by this authorJunran Zhang, Junran Zhang National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorHuakun Zuo, Huakun Zuo Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074 P. R. ChinaSearch for more papers by this authorMinhao Zhang, Minhao Zhang National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorZhongxia Wei, Zhongxia Wei School of Physics, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorWei Niu, Wei Niu National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorZhengcai Xia, Zhengcai Xia Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074 P. R. ChinaSearch for more papers by this authorXiangang Wan, Xiangang Wan School of Physics, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorYulin Chen, Yulin Chen School of Physical Science and Technology, ShanghaiTech University, CAS-Shanghai Science Research Center, Shanghai, 200031 P. R. ChinaSearch for more papers by this authorFengqi Song, Corresponding Author Fengqi Song [email protected] School of Physics, Nanjing University, Nanjing, 210093 P. R. ChinaE-mail: [email protected], [email protected], [email protected]Search for more papers by this authorYongbing Xu, Yongbing Xu National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorBaigeng Wang, Baigeng Wang School of Physics, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorGuanghou Wang, Guanghou Wang School of Physics, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorRong Zhang, Corresponding Author Rong Zhang [email protected] National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 P. R. ChinaE-mail: [email protected], [email protected], [email protected]Search for more papers by this author Xuefeng Wang, Corresponding Author Xuefeng Wang [email protected] National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 P. R. ChinaE-mail: [email protected], [email protected], [email protected]Search for more papers by this authorXingchen Pan, Xingchen Pan School of Physics, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorMing Gao, Ming Gao National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorJihai Yu, Jihai Yu School of Physics, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorJuan Jiang, Juan Jiang School of Physical Science and Technology, ShanghaiTech University, CAS-Shanghai Science Research Center, Shanghai, 200031 P. R. ChinaSearch for more papers by this authorJunran Zhang, Junran Zhang National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorHuakun Zuo, Huakun Zuo Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074 P. R. ChinaSearch for more papers by this authorMinhao Zhang, Minhao Zhang National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorZhongxia Wei, Zhongxia Wei School of Physics, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorWei Niu, Wei Niu National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorZhengcai Xia, Zhengcai Xia Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074 P. R. ChinaSearch for more papers by this authorXiangang Wan, Xiangang Wan School of Physics, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorYulin Chen, Yulin Chen School of Physical Science and Technology, ShanghaiTech University, CAS-Shanghai Science Research Center, Shanghai, 200031 P. R. ChinaSearch for more papers by this authorFengqi Song, Corresponding Author Fengqi Song [email protected] School of Physics, Nanjing University, Nanjing, 210093 P. R. ChinaE-mail: [email protected], [email protected], [email protected]Search for more papers by this authorYongbing Xu, Yongbing Xu National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorBaigeng Wang, Baigeng Wang School of Physics, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorGuanghou Wang, Guanghou Wang School of Physics, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorRong Zhang, Corresponding Author Rong Zhang [email protected] National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 P. R. ChinaE-mail: [email protected], [email protected], [email protected]Search for more papers by this author First published: 01 August 2016 https://doi.org/10.1002/aelm.201600228Citations: 110Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Graphical Abstract ZrSiS materials show unsaturated magnetoresistance until a magnetic field of 53 T with a butterfly-shaped angular dependence. Intense Shubnikov-de Haas oscillations resolve a bulk Dirac cone with a nontrivial Berry phase. Combined with angle-resolved photoemission spectroscopy and theoretical calculations, ZrSiS is proved to be a Dirac material with both surface and bulk Dirac bands. Citing Literature Supporting Information As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Filename Description aelm201600228-sup-0001-S1.pdf2.2 MB Supplementary Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. Volume2, Issue10October 20161600228 RelatedInformation
Publication Year: 2016
Publication Date: 2016-08-01
Language: en
Type: article
Indexed In: ['crossref']
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