Title: <font>AU</font>/<font>N</font>-<font>SI</font> SCHOTTKY DIODE WITH <font>NO</font><sub><font>x</font></sub> INCORPORATION
Abstract: APPC 2000, pp. 139-141 (2001) No AccessAU/N-SI SCHOTTKY DIODE WITH NOx INCORPORATIONLE THI TRONG TUYEN, DANG XUAN VINH and PHAN HONG KHOILE THI TRONG TUYENInstitute of Materials Science, NCST, Vietnam, DANG XUAN VINHHue University, Vietnam and PHAN HONG KHOIInstitute of Materials Science, NCST, Vietnamhttps://doi.org/10.1142/9789812811523_0023Cited by:1 PreviousNext AboutSectionsPDF/EPUB ToolsAdd to favoritesDownload CitationsTrack CitationsRecommend to Library ShareShare onFacebookTwitterLinked InRedditEmail Abstract: Current - voltage (I-V) characteristics were measured for Au/n-Si Schottky diode at room temperature in air and in NOx. The derived Schottky barrier height, the ideality factor and the reverse current were significantly changed with the incorporation of NOX. FiguresReferencesRelatedDetailsCited By 1Highly sensitive NOx gas sensor based on a Au/n-Si Schottky diodeLe Thi Trong Tuyen, Dang Xuan Vinh, Phan Hong Khoi and Gerald Gerlach1 May 2002 | Sensors and Actuators B: Chemical, Vol. 84, No. 2-3 APPC 2000Metrics History PDF download
Publication Year: 2001
Publication Date: 2001-05-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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