Title: Problems occurred in IGBT and their resolvents
Abstract: IGBT(Insulated Gate Bipolar Transistor) is widely used because of its merits of high swi-tching speed,high frequency and easy control. But along with power electronics technology deve-lopment for higher frequency and capacity,the switcher brings high losses and severe EMI,and the over-voltage or over-current results in component damage. The causes are discussed from the inner structure of IGBT and the typical countermeasures are summarized,including soft-switching,snubber circuit and new switching component. The soft-switching holds the states of voltage and current during switching period to restrain the d i / d t and d u / d t;the snubber circuit absorbs the extra energy produced by d i / d t and d u / d t and feeds back to another region. Application of new switching component IGCT (Integrated Gate Commutated Thyristor) is a challenging scheme.
Publication Year: 2004
Publication Date: 2004-01-01
Language: en
Type: article
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Cited By Count: 1
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