Title: Optimized Design of HCE Degradation Induced by Tilt of Halo
Abstract: In this paper,NMOSFET with wide range of tilt angle of halo implant had been simulated and processed.It was found that HCE degraded more seriously with the higher tilt angle.We suggested a low tilt angle should be adopted considering the trap creation in gate oxide,due to the hot carrier injection.
Publication Year: 2007
Publication Date: 2007-01-01
Language: en
Type: article
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