Title: Study of n-type electrical conductivity in deuterated boron-doped diamond
Abstract: The absence of a shallow donor in diamond with reasonably room temperature has become one of the key obstacle to make diamond-based semiconductor devices.Most recently it has been reported that exposure of p-type(B doped) homoepitaxial diamond layers to deuterium plasma can result in the formation of n-type diamond with a shallow donor state.It's the first time we can identify a shallow donor state in homoepitaxial damond.In this paper,the newly progress on research of conductivity type transition in diamond has been reviewed and analyzed.
Publication Year: 2005
Publication Date: 2005-01-01
Language: en
Type: article
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