Title: The mechanism of HPM pulse-duration damage effect on semiconductor component
Abstract: The mechanism of HPM pulse duration damage effect on semiconductor component results from heat accumulation and diffusion process in the defect area. The experiential formulae of HPM pulse duration damage effect in the range of whole pulse durarion, long pulse duration as well as short pulse duration are obtained, which agree with experiments and numerical simulation effect data very well.
Publication Year: 2001
Publication Date: 2001-01-01
Language: en
Type: article
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Cited By Count: 5
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