Abstract: High compensated silicon and over compensated silicon were acquired by diffiusing Mn-metal into p-type
silicon of low resistivity at high temperature. The acquired samples of resistivity of 3.2×10~3Ω·cm, 4.8×10~4Ω·cm, 1.3×10~5Ω·cm,
3.2×10~5Ω·cm are measured. Their B-values are 5103, 5600, 6103, 6502 K, respectively. The compensated silicon is very
sensitive to ambient temperature.
Publication Year: 2004
Publication Date: 2004-01-01
Language: en
Type: article
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