Title: Design of Nonvolatile Resisitive Random Access Memory Cell Circuits and Spice Simulation
Abstract:To confirm the practical performance index such as erase-write velocity,power operation and integration of the nonvolatile Resistive Random Access Memory(RRAM)further,the RRAM cell circuits are design...To confirm the practical performance index such as erase-write velocity,power operation and integration of the nonvolatile Resistive Random Access Memory(RRAM)further,the RRAM cell circuits are designed,besides,the delay time and power operation characteristics of the RRAM cell circuits are simulated by HSpice program respectively.Meanwhile,the two types of resistive switching of bipolar and unipolar nanodevices,together with their corresponding device architectures are compared and analyzed through simulation.1T1R-RRAM cell is expected for bipolar nonvolatile RRAM,and the result of simulation supplies the reference for the further practicality of nonvolatile RRAM.Read More
Publication Year: 2009
Publication Date: 2009-01-01
Language: en
Type: article
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