Title: X-Ray Photoemission Study of SiO<sub>2</sub>/Si/Si<sub>0.55</sub>Ge<sub>0.45</sub>/Si Heterostructures
Abstract: An SiO2/Si-cap/Si0.55Ge0.45 heterostructure was fabricated on p-type Si(100) and strained silicon on insulator (SOI) substrates by low pressure chemical vapor deposition (LPCVD) and subsequent thermal oxidation in an O2 + H2 gas mixture. Chemical bonding features and valence band offsets in the heterostructures were evaluated by using high-resolution x-ray photoelectron spectroscopy (XPS) measurements and thinning the stack layers with a wet chemical solution.
Publication Year: 2013
Publication Date: 2013-01-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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