Title: Amorphous Silicon Carbide Thin Films Deposited by Magnetron Co-Sputtering: Effect of Applied Power and Deposition Pressure on Film Characteristics
Abstract: In this work, the effect of deposition pressure and total power applied to Si and C targets on the a-SiC film characteristics was investigated by profilometry, X-ray diffraction (XRD), Raman spectroscopy, and Rutherford-Backscattering Spectrometry (RBS). Profilometry results indicate an increase in the film thickness by increasing both the deposition pressure and total power. Both Crich and Si-rich a-SiC films were grown only by varying the deposition pressure or total power. Raman spectra suggest that the films contain amorphous phases because a-SiC clusters together with a-Si and a-C clusters were observed. The XRD analysis confirmed the amorphous structure of these films.
Publication Year: 2012
Publication Date: 2012-08-30
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 6
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