Title: A Simulation Study of SoI-Like Bulk Silicon MOSFET With Improved Performance
Abstract: A silicon-on-insulator-(SoI)-like bulk silicon (SL-BS) MOSFET structure is proposed and compared against an fully depleted SoI MOSFET using 2-D numerical simulations. The SL-BS MOSFET contains a p/n-/p structure, with n- is made of 4 H-SiC. This n- layer is fully depleted through the built-in potential of two p-n junctions. Simulations indicated that the proposed structure is better than SoI in short channel effects simulation except the threshold rolloff, and equivalent with SoI in single-event upset properties. The SL-BS MOSFET exhibits no significant self-heating effect. Overall, the simulation results indicated the proposed structure is suitable for replacing SoI technology for applications in environments with high-dose radiation.
Publication Year: 2014
Publication Date: 2014-09-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 7
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