Get quick answers to your questions about the article from our AI researcher chatbot
{'id': 'https://openalex.org/W2292755518', 'doi': None, 'title': 'Characterization of gallium arsenide nitride and indium gallium arsenide nitride novel semiconductors', 'display_name': 'Characterization of gallium arsenide nitride and indium gallium arsenide nitride novel semiconductors', 'publication_year': 1999, 'publication_date': '1999-05-01', 'ids': {'openalex': 'https://openalex.org/W2292755518', 'mag': '2292755518'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://ttu-ir.tdl.org/ttu-ir/handle/2346/20379', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'dissertation', 'type_crossref': 'dissertation', 'indexed_in': [], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5034591460', 'display_name': 'S. Francoeur', 'orcid': 'https://orcid.org/0000-0002-6129-7026'}, 'institutions': [], 'countries': [], 'is_corresponding': True, 'raw_author_name': 'Sébastien Francoeur', 'raw_affiliation_strings': [], 'affiliations': []}], 'institution_assertions': [], 'countries_distinct_count': 0, 'institutions_distinct_count': 0, 'corresponding_author_ids': ['https://openalex.org/A5034591460'], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': None, 'has_fulltext': False, 'cited_by_count': 0, 'citation_normalized_percentile': {'value': 0.0, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 0, 'max': 56}, 'biblio': {'volume': None, 'issue': None, 'first_page': None, 'last_page': None}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10099', 'display_name': 'First-Principles Calculations for III-Nitride Semiconductors', 'score': 0.994, 'subfield': {'id': 'https://openalex.org/subfields/3104', 'display_name': 'Condensed Matter Physics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10099', 'display_name': 'First-Principles Calculations for III-Nitride Semiconductors', 'score': 0.994, 'subfield': {'id': 'https://openalex.org/subfields/3104', 'display_name': 'Condensed Matter Physics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10022', 'display_name': 'Quantum Dot Devices and Semiconductors', 'score': 0.9846, 'subfield': {'id': 'https://openalex.org/subfields/3107', 'display_name': 'Atomic and Molecular Physics, and Optics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T11637', 'display_name': 'Infrared Detector Technologies', 'score': 0.9726, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/arsenide', 'display_name': 'Arsenide', 'score': 0.6449928}, {'id': 'https://openalex.org/keywords/characterization', 'display_name': 'Characterization (materials science)', 'score': 0.5812381}, {'id': 'https://openalex.org/keywords/indium-gallium-nitride', 'display_name': 'Indium gallium nitride', 'score': 0.5432419}, {'id': 'https://openalex.org/keywords/compound-semiconductors', 'display_name': 'Compound Semiconductors', 'score': 0.525387}, {'id': 'https://openalex.org/keywords/indium-arsenide', 'display_name': 'Indium arsenide', 'score': 0.4962173}], 'concepts': [{'id': 'https://openalex.org/C510052550', 'wikidata': 'https://www.wikidata.org/wiki/Q422819', 'display_name': 'Gallium arsenide', 'level': 2, 'score': 0.90745544}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.6848882}, {'id': 'https://openalex.org/C2778871202', 'wikidata': 'https://www.wikidata.org/wiki/Q411713', 'display_name': 'Gallium nitride', 'level': 3, 'score': 0.6588483}, {'id': 'https://openalex.org/C2777122791', 'wikidata': 'https://www.wikidata.org/wiki/Q415296', 'display_name': 'Arsenide', 'level': 3, 'score': 0.6449928}, {'id': 'https://openalex.org/C2780841128', 'wikidata': 'https://www.wikidata.org/wiki/Q5073781', 'display_name': 'Characterization (materials science)', 'level': 2, 'score': 0.5812381}, {'id': 'https://openalex.org/C2778245067', 'wikidata': 'https://www.wikidata.org/wiki/Q425734', 'display_name': 'Indium gallium nitride', 'level': 4, 'score': 0.5432419}, {'id': 'https://openalex.org/C194760766', 'wikidata': 'https://www.wikidata.org/wiki/Q410851', 'display_name': 'Nitride', 'level': 3, 'score': 0.54246116}, {'id': 'https://openalex.org/C543292547', 'wikidata': 'https://www.wikidata.org/wiki/Q1094', 'display_name': 'Indium', 'level': 2, 'score': 0.5309804}, {'id': 'https://openalex.org/C550372918', 'wikidata': 'https://www.wikidata.org/wiki/Q861', 'display_name': 'Gallium', 'level': 2, 'score': 0.5105418}, {'id': 'https://openalex.org/C2781300407', 'wikidata': 'https://www.wikidata.org/wiki/Q418583', 'display_name': 'Indium arsenide', 'level': 3, 'score': 0.4962173}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.45689392}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.25679633}, {'id': 'https://openalex.org/C191897082', 'wikidata': 'https://www.wikidata.org/wiki/Q11467', 'display_name': 'Metallurgy', 'level': 1, 'score': 0.14305645}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://ttu-ir.tdl.org/ttu-ir/handle/2346/20379', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 0, 'referenced_works': [], 'related_works': ['https://openalex.org/W3167297530', 'https://openalex.org/W3154250650', 'https://openalex.org/W3120165142', 'https://openalex.org/W3106059472', 'https://openalex.org/W3105104123', 'https://openalex.org/W3100286381', 'https://openalex.org/W3084633490', 'https://openalex.org/W3031147508', 'https://openalex.org/W3023786725', 'https://openalex.org/W2999345471', 'https://openalex.org/W2995167169', 'https://openalex.org/W2992239550', 'https://openalex.org/W2985322765', 'https://openalex.org/W2962675637', 'https://openalex.org/W2765960924', 'https://openalex.org/W27276717', 'https://openalex.org/W2546197045', 'https://openalex.org/W2243881696', 'https://openalex.org/W1657193626', 'https://openalex.org/W1642443026'], 'abstract_inverted_index': None, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W2292755518', 'counts_by_year': [], 'updated_date': '2024-09-19T11:35:31.487646', 'created_date': '2016-06-24'}