Title: Electrical Characterization of the Influence of the Annealing Energy Density on Carrier Lifetimes in Germanium
Abstract: In this work the authors examine the influence of the annealing energy density on carrier lifetime of n+/p Ge diodes processed by laser thermal annealing (LTA) and rapid thermal annealing (RTA). Current-voltage and capacitance-voltage measurements have been performed, and subsequently the reverse current and capacitance were separated into bulk and peripheral components to extract carrier lifetime: this allows the estimation of the bandgap position of the generation-recombination centres. The results indicate that the generation lifetime increases with increasing laser anneal energy density, coinciding with better crystal quality.
Publication Year: 2015
Publication Date: 2015-10-06
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 2
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