Title: Influence of vacancies on GaN/AlN interface characteristics
Abstract: The results of the influence of point defects (vacancy with interstitial atom) on the GaN/AlN heterointerface is presented. It was ascertained that presence of Al atom vacancy in the heterointerface leads to the contacting layer atoms rearrangement. The presence of N atom vacancy does not influence on the contacting Ga and Al layers intermixing.
Publication Year: 2016
Publication Date: 2016-02-26
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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