Title: Progress with surface passivation of heavily doped n+ silicon by industrial PECVD SiNx films
Abstract: Significant progress in surface passivation of phosphorus diffused n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> silicon surfaces is reported in this work using standard industrial inline plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> ) films deposited on ultrathin (~0.6 nm) chemically grown silicon oxide (SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> ). Record low emitter saturation current density (J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0e</sub> ) values of 10 and 22 fA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> are reported for 170-Ω/sq planar and textured n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> silicon, respectively. Contactless corona-voltage measurements revealed mid-gap interface defect density D <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">it</sub> at the Si surface to be about 1×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> eV <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> for SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> films deposited on the ultrathin SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> . It is explained that the surface passivation mechanism of the fabricated samples to be completely ruled by chemical passivation.
Publication Year: 2015
Publication Date: 2015-06-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 4
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