Abstract: Thispaper presents thepreliminary workon thedesign andmodeling ofmetal finger capacitors forradio frequency (RF)applications. Thecapacitors arefabricated using Silterra's industry standard 180 nnRFCMOS process technology. Thecapacitors are drawnusing upto5 metallayers. SPICElumped- element circuit models ofthecapacitors aredeveloped. Thisincludes effects suchas parasitic ground capacitance, series resistance, parasitic inductance, voltagedependence, temperature dependence, mismatch, and process variation. The model development processincludes converting RF measurement information (S-parameters) into equivalent circuit models. Equivalent circuits are designed withideal capacitors, inductors, andresistors interconnected toaccurately represent theintegrated RFcomponent with all related properties.
Publication Year: 2005
Publication Date: 2005-01-01
Language: en
Type: article
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