Title: Analysis of Low Power SRAM Memory Cell using Tanner Tool
Abstract: The need for low-power design is becoming a major issue in high-performance digital systems such as microprocessors, Digital Signal Processors (DSPs) and other applications. The increasing market of mobile devices and battery powered portable electronic systems is creating demands for chips that consume the smallest possible amount of power. SRAM consist of almost 60% of Very Large Scale Integrated (VLSI) circuits. It is also said that memories are the biggest culprit for the power dissipation in any digital system and No digital system gets complete without memories. The power consumption and speed of SRAMs are important issue that has lead to multiple designs with the purpose of minimizing the power consumption during. This thesis focuses on the power dissipation during the Write operation in six-T CMOS SRAM as well as read operation also. In this thesis SRAM cell will includes one more extra transistor that will control the overall capacitances during the write and read operation and will optimize the total capacitance will result out the decrease in the power dissipation. Here in this thesis we are targeting the short circuit power dissipation as well as switching power dissipation which is also known as dynamic power. The whole thesis circuit verification is done on the Tanner tool, Schematic of the SRAM cell is designed on the S-Edit and net list simulation done by using T-spice and waveforms are analyzed through the W-edit. The circuit is characterised by using the 130nm technology which is having q supply voltage 0f 1.5volt and threshold voltage is 0.40volts. The results are compared with Conventional 6T SRAM cell which is also being characterized in this thesis with the same technology. This low power cell consumes lesser power in some case maximum it is saving 54% as compared to existing SRAM cell so this type of memory cell will be more useful in portable electronics and battery operated devices.
Publication Year: 2012
Publication Date: 2012-01-01
Language: en
Type: article
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Cited By Count: 8
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