Title: The design of 1 W 2-stage power amplifier for IMT-2000 application
Abstract: In this paper, 1 Watt Power amplifier for IMT-2000 application with the discrete type of PHEMT (ATF-34143, 800 /spl mu/m gate width, Agilent Technologies) and GaAs MESFET (EFA240D-SOT89, 2400 /spl mu/m gate width, Excelics Semiconductor) is designed and fabricated. The power amplifier has characteristics such as over 30 dBm of P/sub 1 dB,OUT/ (1 dB gain compression output power), 27 dB of linear gain, and 33 dBc of OTP3 (output third order intercept point).
Publication Year: 2002
Publication Date: 2002-11-11
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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