Title: Asphericity and temperature dependence of the bond charge in silicon
Abstract: physica status solidi (b)Volume 107, Issue 1 p. K19-K23 Short Note Asphericity and temperature dependence of the bond charge in silicon U. Pietsch, U. Pietsch Sektion Physik der Karl-Marx-Universitä Leipzig, Arbeitsgemeinschaft AIII-Bv Halbleiter Search for more papers by this authorK. Unger, K. Unger Sektion Physik der Karl-Marx-Universitä Leipzig, Arbeitsgemeinschaft AIII-Bv Halbleiter Search for more papers by this author U. Pietsch, U. Pietsch Sektion Physik der Karl-Marx-Universitä Leipzig, Arbeitsgemeinschaft AIII-Bv Halbleiter Search for more papers by this authorK. Unger, K. Unger Sektion Physik der Karl-Marx-Universitä Leipzig, Arbeitsgemeinschaft AIII-Bv Halbleiter Search for more papers by this author First published: 1 September 1981 https://doi.org/10.1002/pssb.2221070145Citations: 3 Linéstr. 5, DDR-7010 Leipzig, DDR. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Citing Literature Volume107, Issue11 September 1981Pages K19-K23 RelatedInformation
Publication Year: 1981
Publication Date: 1981-09-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 3
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