Title: Effects of In or Ga doping on the growth behavior and optical properties of ZnO nanorods fabricated by hydrothermal process
Abstract: physica status solidi (a)Volume 210, Issue 8 p. 1552-1556 Original Paper Effects of In or Ga doping on the growth behavior and optical properties of ZnO nanorods fabricated by hydrothermal process Geun Chul Park, Geun Chul Park School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 KoreaSearch for more papers by this authorSoo Min Hwang, Soo Min Hwang School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 KoreaSearch for more papers by this authorJun Hyuk Choi, Jun Hyuk Choi School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 KoreaSearch for more papers by this authorYong Hun Kwon, Yong Hun Kwon School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 KoreaSearch for more papers by this authorHyung Koun Cho, Hyung Koun Cho School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 KoreaSearch for more papers by this authorSang-Woo Kim, Sang-Woo Kim School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 KoreaSearch for more papers by this authorJun Hyung Lim, Corresponding Author Jun Hyung Lim School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 Korea Corresponding author: e-mail [email protected], Phone: +82 10 6409 5293, Fax: +82 31 299 4749 e-mail [email protected], Phone: +82 31 290 7385, Fax: +82 31 299 4749Search for more papers by this authorJinho Joo, Corresponding Author Jinho Joo School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 Korea Corresponding author: e-mail [email protected], Phone: +82 10 6409 5293, Fax: +82 31 299 4749 e-mail [email protected], Phone: +82 31 290 7385, Fax: +82 31 299 4749Search for more papers by this author Geun Chul Park, Geun Chul Park School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 KoreaSearch for more papers by this authorSoo Min Hwang, Soo Min Hwang School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 KoreaSearch for more papers by this authorJun Hyuk Choi, Jun Hyuk Choi School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 KoreaSearch for more papers by this authorYong Hun Kwon, Yong Hun Kwon School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 KoreaSearch for more papers by this authorHyung Koun Cho, Hyung Koun Cho School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 KoreaSearch for more papers by this authorSang-Woo Kim, Sang-Woo Kim School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 KoreaSearch for more papers by this authorJun Hyung Lim, Corresponding Author Jun Hyung Lim School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 Korea Corresponding author: e-mail [email protected], Phone: +82 10 6409 5293, Fax: +82 31 299 4749 e-mail [email protected], Phone: +82 31 290 7385, Fax: +82 31 299 4749Search for more papers by this authorJinho Joo, Corresponding Author Jinho Joo School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 Korea Corresponding author: e-mail [email protected], Phone: +82 10 6409 5293, Fax: +82 31 299 4749 e-mail [email protected], Phone: +82 31 290 7385, Fax: +82 31 299 4749Search for more papers by this author First published: 14 June 2013 https://doi.org/10.1002/pssa.201200907Citations: 43Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Abstract ZnO nanorods doped with In or Ga were synthesized by a facile hydrothermal process on sol–gel deposited ZnO seed layers. The effects of dopants on the morphology, chemical bonding structure, and optical property of the ZnO nanorods were discussed based on the field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) results. XRD and XPS results indicated that In or Ga ions were doped in the ZnO lattice. Undoped and In- or Ga-doped ZnO nanorods had a hexagonal pillar shape and a single crystal wurtzite structure with (001) growth direction. For the doped samples, the average diameter of the nanorods increased, while the number of the nanorods decreased, compared to the undoped sample. In the PL spectra, the near band edge (NBE) emission peaks of both doped samples shifted to a lower wavelength. On the other hand, the intensity of visible emission increased for the In-doped sample, but decreased for the Ga-doped sample. We considered that this variation was related to the different concentrations of the oxygen vacancies between the samples, which had bond strengths of Ga–O and In–O different from that of Zn–O. Citing Literature Volume210, Issue8August 2013Pages 1552-1556 RelatedInformation
Publication Year: 2013
Publication Date: 2013-06-14
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 44
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