Title: Asymmetric-Waveguide Laser Diode for High-Power Optical Pulse Generation by Gain Switching
Abstract: A semiconductor laser with a strongly asymmetric waveguide structure and a relatively thick (~0.1 mum) active layer, resulting in an extremely large equivalent spot size, is proposed and analyzed for the purpose of generating high-power single-optical pulses by gain switching. An improvement in obtainable single-pulse energies of about an order of magnitude over conventional laser structures is predicted.
Publication Year: 2009
Publication Date: 2009-04-22
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 78
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