Title: Scaling of maximum capacitance of MOSFET with ultra-thin oxide
Abstract: The maximum capacitance of a polysilicon-gate MOSFET against oxide thickness is studied for different gate and substrate doping levels. It is found that substrate doping contributes to transistor capacitance degradation, imposing a limit on the lower voltage operation for sub-0.1 µm CMOS technologies.
Publication Year: 1998
Publication Date: 1998-01-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 11
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot