Title: An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs
Abstract: In this paper, a strong inversion drain current model incorporating various effects such as channel length modulation has been developed for a short-channel symmetrical triple material - double gate (TM-DG) MOSFET based on the drift current equation. The model results have been compared with the simulation data obtained by using the commercially available device simulation software ATLAS™.
Publication Year: 2011
Publication Date: 2011-07-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 3
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