Title: Hydrogen gas sensing application of Al/NiO Schottky diode
Abstract: Undoped p-type NiO thin film has been developed on high resistivity Si substrates by reactive pulsed laser deposition technique (RPLD). Subsequently an Al/NiO Schottky diode has been fabricated by electron gun evaporation and was functionalized as H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> gas sensor.
Publication Year: 2008
Publication Date: 2008-10-01
Language: en
Type: article
Indexed In: ['crossref']
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