Title: Two-Dimensional Analytical Threshold Voltage and Subthreshold Swing Models of Undoped Symmetric Double-Gate MOSFETs
Abstract: We have developed analytical physically based models for the threshold voltage [including the drain-induced barrier lowering (DIBL) effect] and the subthreshold swing of undoped symmetrical double-gate (DG) MOSFETs. The models are derived from an analytical solution of the 2-D Poisson equation in which the electron concentration was included. The models for DIBL, subthreshold swing, and threshold voltage roll-off have been verified by comparison with 2-D numerical simulations for different values of channel length, channel thickness, and drain-source voltage; very good agreement with the numerical simulations has been observed
Publication Year: 2007
Publication Date: 2007-06-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 113
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