Title: A low power GaAs MESFET monolithic downconverter for digital handheld telephone applications
Abstract: A monolithic GaAs MESFET downconverter for 1.9-GHz digital handheld telephone applications has been designed and fabricated. The downconverter operates from a single supply, and uses no dual gate or series biased FETs, which allows operation at lower supply voltages. The circuit exhibits 22 dB of conversion gain and a 3.9-dB noise figure at a bias of 2.7 V and 5 mA, with an LO (local oscillator) drive of -10 dBm. For a supply voltage of 1.25 V and an LO drive level of -13 dBm, a conversion gain of 17.2 dB and a noise figure of 4.3 dB are obtained.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Publication Year: 2002
Publication Date: 2002-12-31
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 6
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