Title: Flexible Electronics: Highly Flexible and Transparent Multilayer MoS<sub>2</sub> Transistors with Graphene Electrodes (Small 19/2013)
Abstract: SmallVolume 9, Issue 19 p. 3185-3185 Cover PictureFree Access Flexible Electronics: Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes (Small 19/2013) Jongwon Yoon, Jongwon Yoon School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, KoreaSearch for more papers by this authorWoojin Park, Woojin Park School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, KoreaSearch for more papers by this authorGa-Yeong Bae, Ga-Yeong Bae School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, KoreaSearch for more papers by this authorYonghun Kim, Yonghun Kim School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, KoreaSearch for more papers by this authorHun Soo Jang, Hun Soo Jang School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, KoreaSearch for more papers by this authorYujun Hyun, Yujun Hyun School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, KoreaSearch for more papers by this authorSung Kwan Lim, Sung Kwan Lim Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, KoreaSearch for more papers by this authorYung Ho Kahng, Yung Ho Kahng Research Institute for Solar and Sustainable Energies, Gwangju Institute of Science and Technology, Gwangju 500-712, KoreaSearch for more papers by this authorWoong-Ki Hong, Corresponding Author Woong-Ki Hong [email protected] Jeonju center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 561-180, Korea Woong-Ki Hong, Jeonju center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 561-180, Korea. Heung Cho Ko, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, KoreaSearch for more papers by this authorByoung Hun Lee, Byoung Hun Lee School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, Korea Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, KoreaSearch for more papers by this authorHeung Cho Ko, Corresponding Author Heung Cho Ko [email protected] School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, Korea Woong-Ki Hong, Jeonju center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 561-180, Korea. Heung Cho Ko, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, KoreaSearch for more papers by this author Jongwon Yoon, Jongwon Yoon School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, KoreaSearch for more papers by this authorWoojin Park, Woojin Park School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, KoreaSearch for more papers by this authorGa-Yeong Bae, Ga-Yeong Bae School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, KoreaSearch for more papers by this authorYonghun Kim, Yonghun Kim School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, KoreaSearch for more papers by this authorHun Soo Jang, Hun Soo Jang School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, KoreaSearch for more papers by this authorYujun Hyun, Yujun Hyun School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, KoreaSearch for more papers by this authorSung Kwan Lim, Sung Kwan Lim Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, KoreaSearch for more papers by this authorYung Ho Kahng, Yung Ho Kahng Research Institute for Solar and Sustainable Energies, Gwangju Institute of Science and Technology, Gwangju 500-712, KoreaSearch for more papers by this authorWoong-Ki Hong, Corresponding Author Woong-Ki Hong [email protected] Jeonju center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 561-180, Korea Woong-Ki Hong, Jeonju center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 561-180, Korea. Heung Cho Ko, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, KoreaSearch for more papers by this authorByoung Hun Lee, Byoung Hun Lee School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, Korea Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, KoreaSearch for more papers by this authorHeung Cho Ko, Corresponding Author Heung Cho Ko [email protected] School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, Korea Woong-Ki Hong, Jeonju center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 561-180, Korea. Heung Cho Ko, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-Dong), Buk-Gu, Gwangju 500-712, KoreaSearch for more papers by this author First published: 04 October 2013 https://doi.org/10.1002/smll.201370112Citations: 120AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract A highly flexible and transparent transistor based on an exfoliated MoS2 channel and CVD-grown graphene electrodes is reported by W.-K. Hong, H. C. Ko, and co-workers on page 3295. Introducing 2D nanomaterials provides high mechanical flexibility (available bending radius: ± 2.2 mm), optical transmittance (74%), and high current on/off ratio (>104) with an average field effect mobility of ≈4.7 cm2 V−1 s−1, all of which cannot be achieved by other transistors consisting of a MoS2 active channel/metal electrodes or graphene channel/graphene electrodes. In particular, the MoS2/graphene interface has a low Schottky barrier of ≈22 meV, which is comparable to the MoS2/metal interface. Citing Literature Volume9, Issue19October 11, 2013Pages 3185-3185 RelatedInformation