Title: Thermal expansion contributions to band gap and band offset temperature dependencies
Abstract: Using a thermodynamic approach, we examine the role thermal expansion plays in determining the temperature dependence of band gaps and band offsets. Because of the large variation in the standard volume of electrons (or, equivalently, variation in conduction-band deformation potential) with symmetry of the conduction band, most of the band-gap temperature variation can be ascribed to the valence band for the X gap, while the variation is more equitably divided between the conduction and valence band for the Γ band gap. The particulars of the AlAs/GaAs system are examined in detail, where we find evidence that X electrons have a larger electron–phonon entropy than Γ electrons, and that the lowest conduction-band offset exhibits considerable temperature variation.
Publication Year: 1991
Publication Date: 1991-07-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 12
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