Title: Dynamic threshold voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation of under 0.7 V
Abstract: We propose dynamic threshold-voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation (under 0.7 V). In this technology the metal gate is formed by the damascene gate process and directly connected to the well region (Si-body). Therefore, the connection between gate electrode and silicon body can be more easily fabricated in the DT-DMG transistor than with conventional technologies. Furthermore, we found that low threshold voltage (about 0.15 V reduction for CMOS), high drive current, excellent subthreshold swing (about 60 mV/decade), and uniform electrical characteristics (great reduction of threshold voltage deviation) were obtained in the transistors with midgap work function metal gates (Al/TiN or W/TiN) and low supply voltage (0.7 V).
Publication Year: 2002
Publication Date: 2002-03-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 7
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