Title: Thin Hf<sub><i>x</i></sub>Zr<sub>1‐<i>x</i></sub>O<sub>2</sub> Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability
Abstract: Advanced Energy MaterialsVolume 4, Issue 16 1400610 Communication Thin HfxZr1-xO2 Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability Min Hyuk Park, Min Hyuk Park Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 151–744 Republic of KoreaSearch for more papers by this authorHan Joon Kim, Han Joon Kim Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 151–744 Republic of KoreaSearch for more papers by this authorYu Jin Kim, Yu Jin Kim Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 151–744 Republic of KoreaSearch for more papers by this authorTaehwan Moon, Taehwan Moon Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 151–744 Republic of KoreaSearch for more papers by this authorKeum Do Kim, Keum Do Kim Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 151–744 Republic of KoreaSearch for more papers by this authorCheol Seong Hwang, Corresponding Author Cheol Seong Hwang Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 151–744 Republic of KoreaE-mail: [email protected] for more papers by this author Min Hyuk Park, Min Hyuk Park Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 151–744 Republic of KoreaSearch for more papers by this authorHan Joon Kim, Han Joon Kim Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 151–744 Republic of KoreaSearch for more papers by this authorYu Jin Kim, Yu Jin Kim Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 151–744 Republic of KoreaSearch for more papers by this authorTaehwan Moon, Taehwan Moon Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 151–744 Republic of KoreaSearch for more papers by this authorKeum Do Kim, Keum Do Kim Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 151–744 Republic of KoreaSearch for more papers by this authorCheol Seong Hwang, Corresponding Author Cheol Seong Hwang Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 151–744 Republic of KoreaE-mail: [email protected] for more papers by this author First published: 01 July 2014 https://doi.org/10.1002/aenm.201400610Citations: 224Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract The promising energy storage properties of new lead-free antiferroelectric HfxZr1-xO2 (x = 0.1–0.4) films with high energy storage density are reported. The energy storage density of the Hf0.3Zr0.7O2 capacitor does not decrease with the increase in temperature up to 175 °C, and it decreases by only ≈4.5% after field cycling 109 times. Citing Literature Supporting Information As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Filename Description aenm201400610-sup-0001-S1.pdf917.5 KB Supplementary Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. Volume4, Issue16November 18, 20141400610 RelatedInformation
Publication Year: 2014
Publication Date: 2014-07-01
Language: en
Type: article
Indexed In: ['crossref']
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