Title: GaAs field-effect transistors by selective sulphur-ion implantation
Abstract:GaAs field-effect transistors without a mesa structure have been fabricated by selective sulphur-ion implantation into Cr-doped GaAs substrates. The transconductance was 16 mS and the maximum oscillat...GaAs field-effect transistors without a mesa structure have been fabricated by selective sulphur-ion implantation into Cr-doped GaAs substrates. The transconductance was 16 mS and the maximum oscillation frequency was 30 GHz.Read More
Publication Year: 1976
Publication Date: 1976-08-19
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 7
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