High-sensitivity and no-crosstalk pixel technology for embedded CMOS image sensor

Name: Work Video:
Duration: 3 min 30 s
M. Furumiya; H. Ohkubo; Y. Muramatsu; S. Kurosawa; F. Okamoto; Yuki Fujimoto; Y. Nakashiba
{'id': 'https://openalex.org/W2107296488', 'doi': 'https://doi.org/10.1109/16.954458', 'title': 'High-sensitivity and no-crosstalk pixel technology for embedded CMOS image sensor', 'display_name': 'High-sensitivity and no-crosstalk pixel technology for embedded CMOS image sensor', 'publication_year': 2001, 'publication_date': '2001-01-01', 'ids': {'openalex': 'https://openalex.org/W2107296488', 'doi': 'https://doi.org/10.1109/16.954458', 'mag': '2107296488'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/16.954458', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S162355128', 'display_name': 'IEEE Transactions on Electron Devices', 'issn_l': '0018-9383', 'issn': ['0018-9383', '1557-9646'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310319808', 'host_organization_name': 'Institute of Electrical and Electronics Engineers', 'host_organization_lineage': ['https://openalex.org/P4310319808'], 'host_organization_lineage_names': ['Institute of Electrical and Electronics Engineers'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5038548940', 'display_name': 'M. Furumiya', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I118347220', 'display_name': 'NEC (Japan)', 'ror': 'https://ror.org/04jndar25', 'country_code': 'JP', 'type': 'company', 'lineage': ['https://openalex.org/I118347220']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'M. Furumiya', 'raw_affiliation_strings': ['ULSI Device Dev. Div., NEC Corp., Kanagawa, Japan'], 'affiliations': [{'raw_affiliation_string': 'ULSI Device Dev. Div., NEC Corp., Kanagawa, Japan', 'institution_ids': ['https://openalex.org/I118347220']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5052860266', 'display_name': 'H. Ohkubo', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I118347220', 'display_name': 'NEC (Japan)', 'ror': 'https://ror.org/04jndar25', 'country_code': 'JP', 'type': 'company', 'lineage': ['https://openalex.org/I118347220']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'H. Ohkubo', 'raw_affiliation_strings': ['[ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan]'], 'affiliations': [{'raw_affiliation_string': '[ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan]', 'institution_ids': ['https://openalex.org/I118347220']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5109166401', 'display_name': 'Y. Muramatsu', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I118347220', 'display_name': 'NEC (Japan)', 'ror': 'https://ror.org/04jndar25', 'country_code': 'JP', 'type': 'company', 'lineage': ['https://openalex.org/I118347220']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'Y. Muramatsu', 'raw_affiliation_strings': ['[ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan]'], 'affiliations': [{'raw_affiliation_string': '[ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan]', 'institution_ids': ['https://openalex.org/I118347220']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5110138663', 'display_name': 'S. Kurosawa', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I118347220', 'display_name': 'NEC (Japan)', 'ror': 'https://ror.org/04jndar25', 'country_code': 'JP', 'type': 'company', 'lineage': ['https://openalex.org/I118347220']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'S. Kurosawa', 'raw_affiliation_strings': ['[ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan]'], 'affiliations': [{'raw_affiliation_string': '[ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan]', 'institution_ids': ['https://openalex.org/I118347220']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5017859214', 'display_name': 'F. Okamoto', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I118347220', 'display_name': 'NEC (Japan)', 'ror': 'https://ror.org/04jndar25', 'country_code': 'JP', 'type': 'company', 'lineage': ['https://openalex.org/I118347220']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'F. Okamoto', 'raw_affiliation_strings': ['[ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan]'], 'affiliations': [{'raw_affiliation_string': '[ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan]', 'institution_ids': ['https://openalex.org/I118347220']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5102952464', 'display_name': 'Yuki Fujimoto', 'orcid': 'https://orcid.org/0000-0003-0095-9580'}, 'institutions': [{'id': 'https://openalex.org/I118347220', 'display_name': 'NEC (Japan)', 'ror': 'https://ror.org/04jndar25', 'country_code': 'JP', 'type': 'company', 'lineage': ['https://openalex.org/I118347220']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'Y. Fujimoto', 'raw_affiliation_strings': ['[ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan]'], 'affiliations': [{'raw_affiliation_string': '[ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan]', 'institution_ids': ['https://openalex.org/I118347220']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5016512942', 'display_name': 'Y. Nakashiba', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I118347220', 'display_name': 'NEC (Japan)', 'ror': 'https://ror.org/04jndar25', 'country_code': 'JP', 'type': 'company', 'lineage': ['https://openalex.org/I118347220']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'Y. Nakashiba', 'raw_affiliation_strings': ['[ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan]'], 'affiliations': [{'raw_affiliation_string': '[ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan]', 'institution_ids': ['https://openalex.org/I118347220']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': 3.179, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 55, 'citation_normalized_percentile': {'value': 0.967381, 'is_in_top_1_percent': False, 'is_in_top_10_percent': True}, 'cited_by_percentile_year': {'min': 92, 'max': 93}, 'biblio': {'volume': '48', 'issue': '10', 'first_page': '2221', 'last_page': '2227'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T11992', 'display_name': 'CCD and CMOS Imaging Sensors', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T11992', 'display_name': 'CCD and CMOS Imaging Sensors', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T13114', 'display_name': 'Image Processing Techniques and Applications', 'score': 0.997, 'subfield': {'id': 'https://openalex.org/subfields/2214', 'display_name': 'Media Technology'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T12389', 'display_name': 'Infrared Target Detection Methodologies', 'score': 0.9953, 'subfield': {'id': 'https://openalex.org/subfields/2202', 'display_name': 'Aerospace Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/photodiode', 'display_name': 'Photodiode', 'score': 0.9301442}, {'id': 'https://openalex.org/keywords/cmos-sensor', 'display_name': 'CMOS Sensor', 'score': 0.49975562}, {'id': 'https://openalex.org/keywords/dot-pitch', 'display_name': 'Dot pitch', 'score': 0.44703048}], 'concepts': [{'id': 'https://openalex.org/C751236', 'wikidata': 'https://www.wikidata.org/wiki/Q175943', 'display_name': 'Photodiode', 'level': 2, 'score': 0.9301442}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.69067013}, {'id': 'https://openalex.org/C160633673', 'wikidata': 'https://www.wikidata.org/wiki/Q355198', 'display_name': 'Pixel', 'level': 2, 'score': 0.6306298}, {'id': 'https://openalex.org/C76935873', 'wikidata': 'https://www.wikidata.org/wiki/Q209121', 'display_name': 'Image sensor', 'level': 2, 'score': 0.6270272}, {'id': 'https://openalex.org/C46362747', 'wikidata': 'https://www.wikidata.org/wiki/Q173431', 'display_name': 'CMOS', 'level': 2, 'score': 0.62489283}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.6182937}, {'id': 'https://openalex.org/C172385210', 'wikidata': 'https://www.wikidata.org/wiki/Q5339', 'display_name': 'Transistor', 'level': 3, 'score': 0.6020803}, {'id': 'https://openalex.org/C155512908', 'wikidata': 'https://www.wikidata.org/wiki/Q210745', 'display_name': 'CMOS sensor', 'level': 3, 'score': 0.49975562}, {'id': 'https://openalex.org/C179813606', 'wikidata': 'https://www.wikidata.org/wiki/Q2032861', 'display_name': 'Dot pitch', 'level': 3, 'score': 0.44703048}, {'id': 'https://openalex.org/C120665830', 'wikidata': 'https://www.wikidata.org/wiki/Q14620', 'display_name': 'Optics', 'level': 1, 'score': 0.34030104}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.3228891}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.25245368}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.22338995}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.12135643}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/16.954458', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S162355128', 'display_name': 'IEEE Transactions on Electron Devices', 'issn_l': '0018-9383', 'issn': ['0018-9383', '1557-9646'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310319808', 'host_organization_name': 'Institute of Electrical and Electronics Engineers', 'host_organization_lineage': ['https://openalex.org/P4310319808'], 'host_organization_lineage_names': ['Institute of Electrical and Electronics Engineers'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [{'score': 0.78, 'display_name': 'Affordable and clean energy', 'id': 'https://metadata.un.org/sdg/7'}], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 11, 'referenced_works': ['https://openalex.org/W1587392709', 'https://openalex.org/W2080214472', 'https://openalex.org/W2117735807', 'https://openalex.org/W2123384857', 'https://openalex.org/W2134948581', 'https://openalex.org/W2153861054', 'https://openalex.org/W2161495441', 'https://openalex.org/W2173916097', 'https://openalex.org/W2533418212', 'https://openalex.org/W2543070864', 'https://openalex.org/W2985030261'], 'related_works': ['https://openalex.org/W4255753471', 'https://openalex.org/W2792670813', 'https://openalex.org/W2352535872', 'https://openalex.org/W2349576212', 'https://openalex.org/W2125775971', 'https://openalex.org/W2106574814', 'https://openalex.org/W2069998638', 'https://openalex.org/W2022123780', 'https://openalex.org/W1981776476', 'https://openalex.org/W1979129154'], 'abstract_inverted_index': {'A': [0, 126, 138], 'high-photosensitivity': [1], 'and': [2, 34], 'no-crosstalk': [3], 'pixel': [4, 97, 168], 'technology': [5], 'has': [6], 'been': [7], 'developed': [8, 29], 'for': [9, 44, 54, 143], 'an': [10, 35, 76, 156], 'embedded': [11], 'active-pixel': [12, 129], 'CMOS': [13, 21, 130], 'image': [14, 131], 'sensor,': [15], 'by': [16, 92, 100, 112, 120, 149, 162], 'using': [17, 121, 135, 150, 163], 'a': [18, 30, 63, 104], '0.35-/spl': [19], 'mu/m': [20], 'logic': [22], 'process.': [23], 'To': [24, 48, 95], 'increase': [25], 'the': [26, 45, 50, 55, 59, 67, 90, 116, 122, 151, 164, 177], 'photosensitivity,': [27], 'we': [28, 61], 'deep': [31, 123, 152], 'p-well': [32, 124, 153], 'photodiode': [33, 46, 91], 'antireflective': [36, 165], 'film,': [37, 43], 'consisting': [38], 'of': [39, 141, 158, 179], 'Si/sub': [40], '3/N/sub': [41], '4/': [42], 'surface.': [47], 'eliminate': [49], 'high': [51], 'voltage': [52], 'required': [53], 'reset': [56, 68, 71], 'transistor': [57, 65, 72], 'in': [58, 89, 115], 'pixel,': [60], 'used': [62], 'depletion-type': [64], 'as': [66, 75], 'transistor.': [69], 'The': [70, 167], 'also': [73], 'operates': [74], 'overflow': [77, 83], 'control': [78], 'gate,': [79], 'which': [80], 'enables': [81], 'antiblooming': [82], 'when': [84], 'excess': [85], 'charge': [86], 'is': [87], 'generated': [88], 'high-illumination': [93], 'conditions.': [94], 'suppress': [96], 'crosstalk': [98, 110, 169], 'caused': [99, 111], 'obliquely': [101], 'incident': [102, 145], 'light,': [103], 'double-metal': [105], 'photoshield': [106], 'was': [107, 118, 133, 147, 160, 170], 'used,': [108], 'while': [109, 155], 'electron': [113], 'diffusion': [114], 'substrate': [117], 'suppressed': [119, 171], 'photodiode.': [125], '1/3-in': [127], '330-k-pixel': [128], 'sensor': [132], 'fabricated': [134], 'this': [136], 'technology.': [137], 'sensitivity': [139], 'improvement': [140, 157], '110%': [142], '550-nm': [144], 'light': [146], 'obtained': [148, 161], 'photodiode,': [154], '24%': [159], 'film.': [166], 'to': [172], 'less': [173], 'than': [174], '1%': [175], 'throughout': [176], 'range': [178], 'visible': [180], 'light.': [181]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W2107296488', 'counts_by_year': [{'year': 2022, 'cited_by_count': 1}, {'year': 2021, 'cited_by_count': 2}, {'year': 2020, 'cited_by_count': 2}, {'year': 2019, 'cited_by_count': 1}, {'year': 2018, 'cited_by_count': 1}, {'year': 2017, 'cited_by_count': 3}, {'year': 2016, 'cited_by_count': 2}, {'year': 2015, 'cited_by_count': 1}, {'year': 2014, 'cited_by_count': 4}, {'year': 2013, 'cited_by_count': 4}, {'year': 2012, 'cited_by_count': 2}], 'updated_date': '2024-12-10T17:44:13.084234', 'created_date': '2016-06-24'}
Publication Information

Basic Information

Access and Citation

AI Researcher Chatbot

Primary Location

Authors

Topics

Keywords

Related Works
