Title: Edge-emitting lasers with short-period semiconductor/air distributed Bragg reflector mirrors
Abstract: We demonstrate a short-cavity edge-emitting 0.98-μm GaAs-based laser with semiconductor/air distributed Bragg reflector (DBR) mirrors made by reactive ion etching (RIE). The dc and small-signal modulation properties of 100-μm-long lasers have been measured and are characterized by I/sub th/=4.5 mA and f/sub -3dB/=30 GHz under pulsed conditions, respectively. The far-field pattern of light emanating from the DBR is also measured.
Publication Year: 1997
Publication Date: 1997-07-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 61
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