Title: X-ray Topographic Study on Stacking Faults in Silicon Single Crystals
Abstract: Various types of stacking faults are studied in more detail. Boundaries of stacking faults are concluded to be partial dislocations of the Shockley type. Stacking faults introduced by splitting of total dislocations into partial dislocations are also observed. By comparative studies of X-ray image with optical ones of the etched surface, it is found that some stacking faults consist of multi-planes of different dimensions.
Publication Year: 1964
Publication Date: 1964-02-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 36
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot