Title: Cover Picture: Fabrication of electrically pumped InAs/GaAs quantum dot lasers on Si substrates by Au‐mediated wafer bonding (Phys. Status Solidi C 8/2)
Abstract: Katsuaki Tanabe et al. describe in their article on pp. 319ff. design and fabrication of III–V quantum dot lasers on Si substrates. Quantum dot lasers exhibit low lasing threshold current density and high temperature stability and therefore can minimize and address thermal accumulation in dense large scale integration (LSI). They have realized electrically pumped 1.3 µm room-temperature InAs/GaAs quantum dot lasers monolithically formed on Si substrates, overcoming lattice mismatch by means of wafer bonding as a new basis for next-generation optoelectronic integrated circuits for ultrahigh speed computation and optical communication. Professor Tanabe's research interests are in heterogeneous semiconductor materials integration for high-performance laser and photovoltaic devices.
Publication Year: 2011
Publication Date: 2011-02-01
Language: en
Type: paratext
Indexed In: ['crossref']
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