Title: Acousto-Ferroelectric RAM -New Type of Nonvolatile Memory Device
Abstract: A new paradigm for the operation principle of a ferroelectric random access memory (FeRAM) is presented. The new type of FeRAM is based on piezo-acoustic phenomena in ferroelectric films. It is called acousto-ferroelectric RAM (AFeRAM) because its operation is based on the acoustic method for detecting intrinsic remanent polarization of a ferroelectric memory cell. It has been shown that the novel memory cell concept is highly scalable, so that the structural effective memory cell size can be scaled down to IF <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The advantages of the AFeRAM element are outlined in the text.
Publication Year: 2007
Publication Date: 2007-11-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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