Abstract: The photoconductive properties of copper doped LPE GaP have been investigated. The photoresponse of as-grown surfaces extends from 2.2 to 5.0 eV. Photoconductive gains as high as 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> have been measured. The photoconductive response time to low levels of illumination is typically a few milliseconds and the spatial uniformity of the photosignal is less than 10% over distances of 3 mm. The photomechanism has been investigated by optical quenching and by study of the variation in photosignal with photon flux. These data are interpretable with the sensitized photoconductivity model.
Publication Year: 1977
Publication Date: 1977-01-01
Language: en
Type: article
Indexed In: ['crossref']
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