Abstract: The inner detector of the ATLAS experiment will contain three layers of pixel detectors. The first prototype of the sensor part will be an n+n-device in order to allow partial depleted operation after bulk inversion and a guard-ring scheme keeping the entire detector surface close to the electronic chip on ground potential. Further, a bias structure is introduced providing testability of the sensors before mounting them to the electronics. The design of the single pixel cell is the result of a detailed device simulation study.
Publication Year: 1998
Publication Date: 1998-05-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 38
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